Thermodynamical calculations on the chemical vapour transport of silicon carbide
Author/Authors :
Chaussende، نويسنده , , D and Monteil، نويسنده , , Y and Aboughe-nze، نويسنده , , P and Brylinski، نويسنده , , C and Bouix، نويسنده , , J، نويسنده ,
Pages :
4
From page :
98
To page :
101
Abstract :
We have performed thermodynamical calculations in order to oversee the potential of a new method for growing silicon carbide: the chemical vapour transport process. In this way we have been able to select possible transporting agents and to show the nature of the deposits with varying parameters.
Keywords :
Chemical vapour transport , silicon carbide , Thermodynamical calculations
