Author/Authors :
Ramm، نويسنده , , M.S and Mokhov، نويسنده , , E.N and Demina، نويسنده , , S.E and Ramm، نويسنده , , M.G. and Roenkov، نويسنده , , A.D. and Vodakov، نويسنده , , Yu.A and Segal، نويسنده , , A.S and Vorob’ev، نويسنده , , A.N and Karpov، نويسنده , , S.Yu and Kulik، نويسنده , , A.V and Makarov، نويسنده , , Yu.N، نويسنده ,
Abstract :
Analysis of factors determining growth rate and shape of the crystallization front during sublimation growth of bulk SiC crystals is presented. For this purpose, mass transport of species in the graphite crucible coupled with global heat transfer in a sublimation growth system is studied. Specific features of the growth process in a tantalum container are discussed.
Keywords :
Etching of graphite , Bulk crystals , SiC , sublimation growth , Tantalum container
