Domain misorientation in sublimation grown 4H SiC epitaxial layers

High resolution X-ray diffractometry has been applied to study domain misorientation in 4H SiC epitaxial-layers grown by the sublimation epitaxy method. The development of mosaicity of the epitaxial layer has been studied under different growth conditions, i.e. substrate polarity and layer thickness. In the growth experiments on Si-face with a lattice having a concave curvature the mosaicity was increased in the layer. With increasing thickness the structural quality of the layer was improved. Growth of an epilayer on concave C-face resulted in a domain structure comparable to the substrate but the lattice curvature increased considerably. The concave lattice plane curvature is a probable reason for degraded structural quality.