Title of article :
Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition
Author/Authors :
Vorob’ev، نويسنده , , A.N and Komissarov، نويسنده , , A.E and Segal، نويسنده , , A.S and Makarov، نويسنده , , Yu.N and Karpov، نويسنده , , S.Yu and Zhmakin، نويسنده , , A.I and Rupp، نويسنده , , R، نويسنده ,
Pages :
3
From page :
176
To page :
178
Abstract :
An advanced mathematical model of SiC CVD process accounting for formation and evolution of Si-droplets in the vapor phase is proposed. Effect of temperature on the nucleation process is considered.
Keywords :
CVD , SiC , gas phase , Nucleation
Journal title :
Astroparticle Physics
Record number :
2067414
Link To Document :
https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2067414
بازگشت