Author/Authors :
Zelenin، نويسنده , , V.V. and Lebedev، نويسنده , , A.A. and Rastegaeva، نويسنده , , M.G and Davidov، نويسنده , , D.V and Chelnokov، نويسنده , , V.E and Korogodskii، نويسنده , , M.L، نويسنده ,
Abstract :
The homoepitaxial growth of 6H–SiC layers has been performed using methane and silane as active gas sources. Voltage–capacitance measurements and results of i-DLTS spectroscopy characterized the epilayers. In accordance of the C/Si ratio in the gas phase the epitaxial layers exhibit n- or p-type conductivity. The dependence of ND−NA or NA−ND=F(Si/C) in unintentionally doped layers is, as we suggest, connected with structural defects.
Keywords :
CVD , Methane , Etching H2 , Deep centers , Site-competition
