Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths

We report the values of the absorption coefficient of 4H, 6H and 3C SiC at room temperature, in the range 3900–2968 Å. By using the known shift in the bandgap with temperature, we also present estimates of the absorption coefficient of 4H, 6H and 3C SiC at 2 K. A table is given for penetration depths at 300 and 2 K for seven common lasers used to pump SiC in this region.