Author/Authors :
Lauer، نويسنده , , V and Brémond، نويسنده , , G and Souifi، نويسنده , , A and Guillot، نويسنده , , G and Chourou، نويسنده , , K and Anikin، نويسنده , , M and Madar، نويسنده , , R and Clerjaud، نويسنده , , B and Naud، نويسنده , , C، نويسنده ,
Abstract :
Vanadium deep acceptor level in bulk 6H–SiC and 4H–SiC has been studied by deep level transient spectroscopy (DLTS), optical absorption (OA), photoluminescence (PL) and deep level optical spectroscopy (DLOS). DLTS reveals two levels related to vanadium acceptor level (V3+/V4+) for 6H–SiC at Ec −0.68 eV (cubic sites) and Ec −0.74 eV (hexagonal site) and for 4H–SiC at Ec −0.82 eV. The good correlation obtained between DLOS and OA spectra allows us to identify OA lines and DLOS resonance band as V3+ internal transition between the 3A2 ground state towards excited states. The V3+ ion configuration in 4H–SiC is given.
Keywords :
Electrical characterisation , vanadium , silicon carbide , Optical characterisation
