Title of article
Anomalous forward I–V characteristics of Ti/Au SiC Schottky barrier diodes
Author/Authors
Morrison، نويسنده , , D.J and Hilton، نويسنده , , K.P and Uren، نويسنده , , M.J. and Wright، نويسنده , , N.G and Johnson، نويسنده , , C.M and O’Neill، نويسنده , , A.G، نويسنده ,
Pages
4
From page
345
To page
348
Abstract
The aim of this study was to improve the adhesion of Au Schottky contacts to SiC. In order to do this, before the deposition of the Au layer, a thin layer of Ti was deposited. However, this resulted in an anomalous step in the forward bias electrical characteristic for some diodes. An equivalent circuit model is introduced to explain this irregularity in terms of two barrier heights. PSPICE is used to simulate this model. Simulated and experimental data are in good agreement over the temperature range 25 to 250°C.
Keywords
PSPICE simulation , fabrication , Electrical characterisation , Schottky diodes
Journal title
Astroparticle Physics
Record number
2067447
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