Correlation of electrical and microstructural properties after high dose aluminium implantation into 6H–SiC

The correlation of microstructural and electrical properties of Al-implanted 6H–SiC has been investigated with the aim of optimising the implantation and annealing parameters in order to achieve a higher electrical activation. Al was implanted using multiple energies and doses to form a 500 nm thick homogeneously doped layer with plateau concentrations between 5×1019 and 5×1021 cm−3. Annealing was carried out using an inductively-heated furnace (up to 1750°C, 10 min) as well as a short time annealing set up (flash lamps, 2000°C, 20 ms). A temperature of 400°C was found to be the optimum implantation temperature. Using flash lamp annealing it resulted in a hole concentration of 2×1021 cm−3.