Author/Authors :
Planson، نويسنده , , D and Locatelli، نويسنده , , M.L and Lanois، نويسنده , , F and Chante، نويسنده , , J.P، نويسنده ,
Abstract :
Silicon carbide (SiC) owns very interesting properties to fulfil the requirements of new power electronic applications. This paper reports the design of two vertical power MOSFETs, able to sustain a forward blocking voltage of 600 V. In order to evaluate the performance, 2D-simulations were performed taking into account the current technological constraints and the SiC materials parameters.
