Author/Authors :
Masri، نويسنده , , P and Moreaud، نويسنده , , N and Rouhani Laridjani، نويسنده , , M and Calas، نويسنده , , J and Averous، نويسنده , , M and Chaix، نويسنده , , G and Dollet، نويسنده , , A and Berjoan، نويسنده , , R and Dupuy، نويسنده , , C، نويسنده ,
Abstract :
We demonstrate that the S-correlated theory of misfit induced superstructures and its continuity criteria, defined within the framework of the elasticity theory, enables to predict the composition of buffer layers which can optimize the 3C–SiC/Si interface. The effect of incorporating Ge atoms to the carbon source is investigated and the results are compared with the experimental results.
Keywords :
Semiconductor interfaces , Theory , elasticity theory , Misfit related defects
