Author/Authors :
Cimalla، نويسنده , , V. and Stauden، نويسنده , , Th and Eichhorn، نويسنده , , G and Pezoldt، نويسنده , , J، نويسنده ,
Abstract :
The influence of the heating rate on the initial growth of SiC on silicon by carbonization was investigated for two strongly differing methods: solid source molecular beam epitaxy and rapid thermal chemical vapour deposition. An improvement of the structural and morphological properties can be obtained by a two dimensional nucleation stimulated by a defined heating cycle in a (hydro-) carbon flux. This improvement is strongly associated with a decreased diffusion coefficient for silicon through the grown layer.
