Author/Authors :
Namavar، نويسنده , , F and Colter، نويسنده , , P.C and Planes، نويسنده , , N and Fraisse، نويسنده , , B and Pernot، نويسنده , , J and Juillaguet، نويسنده , , S and Camassel، نويسنده , , J، نويسنده ,
Abstract :
Investigation of porous silicon as a new compliant substrate for hetero-epitaxial deposition of 3C-SiC on silicon has been performed. The resulting layer has been analyzed in terms of X-ray diffraction, infrared reflectivity, micro-Raman scattering and low temperature photoluminescence experiments. From the results, intermediate properties between 3C-SiC deposited on bulk silicon and 3C-SiC deposited on SIMOX have been found.
