Title of article
Sol–gel synthesis and characterization of Zn2SiO4:Mn phosphor films
Author/Authors
Lin، نويسنده , , Jun and Sنnger، نويسنده , , Dirk U and Mennig، نويسنده , , M and Bنrner، نويسنده , , K، نويسنده ,
Pages
6
From page
73
To page
78
Abstract
Mn2+-doped Zn2SiO4 phosphor films were deposited on silicon and quartz glass substrates by sol–gel method (dip-coating). The variations of sol viscosity with time, film thickness with the number of layers were investigated in the Zn2SiO4:Mn system. The results of XRD and IR showed that the Zn2SiO4:Mn films remained amorphous below 700°C and crystallized completely around 1000°C. From AFM studies, it was observed that the grains of 0.5–0.8 μm in size packed closely in Zn2SiO4:Mn films, which were uniform and crack free. The luminescence properties of Zn2SiO4:Mn films were characterized by absorption, excitation and emission spectra, as well as luminescence decay.
Keywords
Phosphor film , Sol–gel method , silicates
Journal title
Astroparticle Physics
Record number
2067662
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