Magnetic and electrical properties of perovskite La1−xMnO3−δ films

The polycrystalline La1−xMnO3−δ films were grown on Si substrates by organometallic deposition (MOD) method. Self-grown α-SiO2 was used as buffer layer. The magnetization, electrical resistivity and magnetoresistance of films were investigated at temperatures ranging from 5 to 298 K. All La1−xMnO3−δ films showing insulator–metal (I–M) transitions exhibited semiconductor behavior for T>Tp. Magnetic property was strongly affected by experimental parameters. The MR variations were correlated to microstructure. A low field MR of ∼13% at 2 KOe was observed.