Author/Authors :
Edelman، نويسنده , , Felix and Hahn، نويسنده , , Horst and Seifried، نويسنده , , Stefan and Alof، نويسنده , , Christian and Hoche، نويسنده , , Holger and Balogh، نويسنده , , Adam and Werner، نويسنده , , Peter and Zakrzewska، نويسنده , , Katarzyna and Radecka، نويسنده , , Marta and Pasierb، نويسنده , , Pawel and Chack، نويسنده , , Albert and Mikhelashvili، نويسنده , , Vissarion and Eisenstein، نويسنده , , Gha، نويسنده ,
Abstract :
Thin films (50–200 nm) of SnO2TiO2 were deposited on SiO2/(001)Si substrates by RF-sputtering and by molecular beam before they were annealed in vacuum at 200–900°C. In-situ TEM, XRD, SEM, Raman and IR-spectroscopy were used to analyze the structure transformations in the SnO2TiO2 films. In the as-deposited state, the films are amorphous. They crystallize at higher temperatures (starting at about 500°C) forming nanosized grains. The problem of the spinodal decomposition in the SnO2TiO2 system observed earlier at high temperatures is discussed also for low-temperature processing. The stoichiometry of the films of both groups (reactive ion sputtered and high-vacuum e-gun sputtered) is being compared.
Keywords :
Titanium oxide , Tin oxide , Nanocrystalline films , Gas sensors
