Structural and optical characterization of self-assembled GaInAs islands grown on AlInAs/InP (113) surfaces

We have studied the structural and the optical properties of self-assembled GaInAs islands grown on AlInAs/InP (113)A and B oriented surfaces. The samples were grown by metalorganic chemical vapor deposition (MOCVD) and investigated using transmission electron microscopy (TEM) and photoluminescence spectroscopy (PL). It is found that the (113)B orientation of InP substrates allows to obtain disk-shaped GaInAs structures with a good size-homogeneity and repartition. On contrary, the GaInAs islands grown on the (113)A orientation have a considerable anisotropic shape, the islands are more elongated along the [011̄] direction. Moreover, the GaInAs islands grown on the (113)B surface exhibit higher luminescence efficiency and a reduction in the photoluminescence spectrum linewidth compared with those grown on the (113)A surface.