• Title of article

    Characterization of (Ti, Al)N films prepared by ion mixing and vapor deposition

  • Author/Authors

    Uchida، نويسنده , , Hitoshi and Yamashita، نويسنده , , Masato and Hanaki، نويسنده , , Satoshi and Ueta، نويسنده , , Takeaki، نويسنده ,

  • Pages
    5
  • From page
    758
  • To page
    762
  • Abstract
    Titanium aluminum nitride (Ti, Al)N films were prepared by depositing Ti and Al metal vapor under simultaneous irradiation of N ions, that is ion mixing and vapor deposition (IVD) technique. With an increase of evaporation Al/Ti and/or transport ratio (Ti + Al)/N, a single-phase of NaCl structure in the films transformed into that of wurtzite structure through a two-phase mixture consisting of NaCl and wurtzite structure. Based on the revelation of two-phase structure, therefore, the optimum preparation conditions for wear- and corrosion-resistive hard coating were identified. The (Ti, Al)N films were also highly resistant against oxidation. Consequently, the results suggest that the Al oxide layers formed on the top of (Ti, Al)N films during elevated temperature oxidation tests protect the films from further oxidation.
  • Keywords
    Ion mixing and vapor deposition (IVD) , Titanium aluminum nitride , phase transition , Pinhole defect , Oxidation resistance , Hard coating
  • Journal title
    Astroparticle Physics
  • Record number

    2068323