Title of article :
Hall effect in ClO4− doped polythiophene and poly(3-methylthiophene)
Author/Authors :
Fukuhara، نويسنده , , T. and Masubuchi، نويسنده , , S. and Kazama، نويسنده , , S.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 1995
Pages :
2
From page :
359
To page :
360
Abstract :
We have studied the temperature dependence of the Hall effect and the resistivity for ClO4− (as-grown) doped polythiophene and poly(3-methylthiophene) films. For both samples, the sign of Hall coefficient is positive between 4.2K and 300K, consistent with the acceptor doping.
Journal title :
Synthetic Metals
Serial Year :
1995
Journal title :
Synthetic Metals
Record number :
2069001
Link To Document :
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