Title of article
Hall effect in ClO4− doped polythiophene and poly(3-methylthiophene)
Author/Authors
Fukuhara، نويسنده , , T. and Masubuchi، نويسنده , , S. and Kazama، نويسنده , , S.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1995
Pages
2
From page
359
To page
360
Abstract
We have studied the temperature dependence of the Hall effect and the resistivity for ClO4− (as-grown) doped polythiophene and poly(3-methylthiophene) films. For both samples, the sign of Hall coefficient is positive between 4.2K and 300K, consistent with the acceptor doping.
Journal title
Synthetic Metals
Serial Year
1995
Journal title
Synthetic Metals
Record number
2069001
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