Title of article :
Electrical anisotropy of α-(BEDT-TTF)2KHg(SCN)4
Author/Authors :
Arifuku، نويسنده , , M. and Tajima، نويسنده , , H. and Ohta، نويسنده , , T. and Tokumoto، نويسنده , , M. and Kinoshita، نويسنده , , N. and Anzai، نويسنده , , H.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 1995
Pages :
2
From page :
827
To page :
828
Abstract :
The transverse magnetoresistance of α-(BEDT-TTF)2KHg(SCN)4 was investigated with the magnetic field rotated within a conducting ac-plane. It was found that the magnetic-field-orientation dependence of the magnetoresistance in the weak-field limit, ΔR(B,θ), has the form ΔR(B,θ) = B2(psin2(θ − θmin) + qcos2(θ − θmin)), where θ is the angle between a-axis and magnetic field direction and (p, q, θmin) are temperature-dependent parameters. By examining the results based on the classical theory of magnetoresistance, it was concluded that the electrical anisotropy within bc-plane is 3.5∼4.5 and 2.5∼3.0 above and below the phase transition at 10 K, respectively.
Journal title :
Synthetic Metals
Serial Year :
1995
Journal title :
Synthetic Metals
Record number :
2069182
Link To Document :
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