Author/Authors :
Kim، نويسنده , , S.K. and Jeong، نويسنده , , W.J. and Park، نويسنده , , G.C. and Back، نويسنده , , Y.G. and Jeong، نويسنده , , Y.G. and Yoo، نويسنده , , Y.T.، نويسنده ,
Abstract :
The polycrystalline thin film of single-phase CuInS2 have been made from Copper/Indium/Sulphide stacked layer at various heat-treatment in the nitrogen atmosphere. The structural and electrical properties of p-type chalcopyrite CuInS2 thin films were investicated. Resistivity, Hall mobility and concentration of the fabricated CuInS2 at optimum heat-treatment were 3 × 10−2 [Ωcm], 0.1 [cm2V−1s−1] and 2 × 1020 [cm−3], respectively.
