Author/Authors :
Nakamura، نويسنده , , T and Yunome، نويسنده , , G and Matsumoto، نويسنده , , M and Miura، نويسنده , , Y.F and Horiuchi، نويسنده , , S and Yamochi، نويسنده , , H and Saito، نويسنده , , G and Isotalo، نويسنده , , H and Stubb، نويسنده , , H، نويسنده ,
Abstract :
The conductivity of the Langmuir-Blodgett (LB) films was examined in terms of a granular structure. The conductivity of bis(ethylenedioxy)tetrathiafulvalene-decyltetracyanoquinodimethane (BO-C10TCNQ) LB film was well fitted by the formula, σ = AT−αexp(-Ea/kT), where the behavior is determined by the semiconducting domain boundaries in the granular-structured film. The metallic nature of the domains was revealed by thermoelectric power measurements: the temperature dependence of the thermoelectric power was almost linear with T. The temperature dependence of the conductivity in tridecylmethylammonium-Au(dmit)2 (3C10-Au) LB film is well explained by a linear combination of Shengʹs model and common metal, R = C1exp[T1(T+T0)] + C2T. The conduction was governed by the fluctuation-induced tunneling between metallic domains.
