Effects of ion beam irradiation on electrical properties of Langmuir-Blodgett (LB) films

The charge transfer complex (TCNQ complex) LB films were fabricated by using the Moving-Wall method. Among various donors, N-isopropyl 4, 4′ bipyridinum was prepared and TCNQ complex of different molar ratios of the acceptor and donor were synthesized. The TCNQ complex LB films were deposited onto glass as Y-type films. The conductivity of multilayers formed from the TCNQ complex was about 10−3 S/cm in the plane of the films. The conductivity of these films was found to be strongly dependent on the ratio of donors. The ion beam (He+, N+ or Ar+) irradiation on these films were also found to increase the conductivity. The most highly conductive films were produced under Nitrogen ion beam irradiation.