Title of article :
Improved preparation of polybenzo[c]thiophene-modified electrodes employing p-toluenesulfonate as dopant anion
Author/Authors :
Higgins، نويسنده , , S.J. Watson-Jones، نويسنده , , C. and King، نويسنده , , G. and Slack، نويسنده , , K.H.D. and Pétidy، نويسنده , , S.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 1996
Pages :
5
From page :
155
To page :
159
Abstract :
Use of tetraethylammonium p-toluenesulfonate (TEATos) as electrolyte for electrodeposition of polybenzo[c]thiophene from CH3CN solution gives compact, smooth films on indium-doped tin oxide electrodes. These grow at lower overpotentials, and with fewer problems of film inhomogeneity, than films grown using tetrafluoroborate electrolytes. Films up to 10 μm thick have been deposited with TEATos, but film growth is self-limiting with tetraethylammonium tetrafluoroborate (TEAT). TEATos-grown films have a different morphology, but can still be reversibly p-doped in the same way as TEAT-grown films. n-Doping, however, is not electrochemically improved by using TEATos as growth electrolyte.
Keywords :
Polyisothianaphthalene , Cyclic voltammetry , Doping , Polythiophene
Journal title :
Synthetic Metals
Serial Year :
1996
Journal title :
Synthetic Metals
Record number :
2070137
Link To Document :
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