Author/Authors :
Curran، نويسنده , , S. and Roth، نويسنده , , S. and Davey، نويسنده , , A.P. and Drury، نويسنده , , A. and Blau، نويسنده , , W.، نويسنده ,
Abstract :
A soluble form of narrow-gap polymer poly-tert-butyl-isothionaphthalene (PTBITN) has been used in the formation of a Schottky diode with the rectifying contact occurring between PTBITN and the aluminium interface region. Indium—tin oxide (ITO) was used as the back transparent electrode and also served as an ohmic contact with the polymer. The device fabricated shows typical photoelectrical and photovoltaic characteristics. In addition, the optical response with regards to photovoltaic effects mirrors that of its absorption spectrum.
