Author/Authors :
Lang، نويسنده , , P. and Ardhaoui، نويسنده , , M. El and Wittmann، نويسنده , , J.C. and Dallas، نويسنده , , J.P. and Horowitz، نويسنده , , G. and Lotz، نويسنده , , B. and Garnier، نويسنده , , F. and Straupe، نويسنده , , C.، نويسنده ,
Abstract :
The use of different kinds of substrates ( SiO2, SiH/Si, HOPG) allows to induce orientation and crystalline organization of sexithiophene organic films. This substrate behavior IS related to its ability to develop interactions with the oligothiophene. Electron diffraction pattern and TEM analysis demonstrate the existence of an epitaxial relationship between the film organization and the substrate ( HOPG, SiH).
