Author/Authors :
Halliday، نويسنده , , D.P. and Eggleston، نويسنده , , J.M. and Adams، نويسنده , , P.N. and Pentland، نويسنده , , I.A. and Monkman، نويسنده , , A.P.، نويسنده ,
Abstract :
We have studied the interface formed between a p-type conducting polyaniline layer and an n-type porous silicon wafer. The contact has rectifying behaviour demonstrated clearly by the IV curves. We can fit our data to a simple Schottky barrier model. The barrier height determined from our data varies from 0.78 to 0.85eV. The ideality factor ranges from 2.8–5.2. Visible electroluminescence has been obtained from this junction when it is placed under a forward bias
