Title of article
Visible electroluminescence from a polyaniline — Porous silicon junction
Author/Authors
Halliday، نويسنده , , D.P. and Eggleston، نويسنده , , J.M. and Adams، نويسنده , , P.N. and Pentland، نويسنده , , I.A. and Monkman، نويسنده , , A.P.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1997
Pages
2
From page
1245
To page
1246
Abstract
We have studied the interface formed between a p-type conducting polyaniline layer and an n-type porous silicon wafer. The contact has rectifying behaviour demonstrated clearly by the IV curves. We can fit our data to a simple Schottky barrier model. The barrier height determined from our data varies from 0.78 to 0.85eV. The ideality factor ranges from 2.8–5.2. Visible electroluminescence has been obtained from this junction when it is placed under a forward bias
Keywords
Light sources , Organic/inorganic interfaces , Polyaniline
Journal title
Synthetic Metals
Serial Year
1997
Journal title
Synthetic Metals
Record number
2070920
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