Title of article
Study on electroluminescent behavior of Ga/Alq3/TCAQ/ITO double layer device
Author/Authors
Cao، نويسنده , , Y.-A. and Bai، نويسنده , , Y.-B. and Men، نويسنده , , Q.-J. and Chen، نويسنده , , C.-H. and Yang، نويسنده , , J.-H. and Chai، نويسنده , , X.-D. and Yang، نويسنده , , W.-S. and Wu، نويسنده , , Z.-W. and Li، نويسنده , , T.-J.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1997
Pages
2
From page
1267
To page
1268
Abstract
A double layer electroluminescent (EL) device, Ga/Alq3/TCAQ/ITO was fabricated by using Alq3 as emitter layer, TCAQ as hole transport layer, and Ga and ITO as electrodes. Based on the data of UV-visible, surface photovoltage spectra (SPS), electric-field-induced SPS (EFISPS) and cyclic voltammograms, the energy band model of the EL device was put forward and its electroluminescent behavior was explained by the model
Keywords
electroluminescence , Heterojunctions
Journal title
Synthetic Metals
Serial Year
1997
Journal title
Synthetic Metals
Record number
2070931
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