Title of article
DLTS investigation of acceptor states in P3MeT Schottky barrier diodes
Author/Authors
Jones، نويسنده , , G.W. and Taylor، نويسنده , , D.M. and Gomes، نويسنده , , H.L.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1997
Pages
2
From page
1341
To page
1342
Abstract
Deep Level Transient Spectroscopy (DLTS) has been used to investigate hole traps in the depletion region of Schottky barrier diodes formed from electropolymerised poly(3-methylthiophene). The capacitance transients appear to be composed of a fast and a slow component. Analysis of the slower component using the “rate window” technique yields isochronal differential capacitance curves that depend on temperature in the manner predicted by theory.
Keywords
Schottky barrier diodes , DLTS , poly(3-methylthiophene)
Journal title
Synthetic Metals
Serial Year
1997
Journal title
Synthetic Metals
Record number
2070959
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