Light activated p-n junction device based on bilayer substituted polythiophene derivatives

A new photoinduced current rectifier based on an all-organic donor-acceptor bilayer substituted polythiophene derivative is described. Under visible and UV illumination (350–750 run), a p-n junction is formed leading to current rectification. Maximum photorectified current is obtained at ≅400 run, with a sharp decrease at shorter wavelengths. This sharp decrease indicates that photons with energy higher than 3.1 eV quench the light activation of this bilayer device.