Photovoltaic effect of heterojunctions between poly(4,4′-dipentoxy-2,2′-bithiophene) and n-doped silicon

The photovoltaic effect of poly(4,4′-dipentoxy-2,2′-bithiophene) (poly(ET2)) conducting polymer deposited on n-doped silicon has been investigated. The plots of short-circuit current, open-circuit voltage, fill factor and conversion efficiency as a function of incident light intensity are reported. Analysis of the photovoltaic characteristics suggests that an internal series resistance limits the junction performance.