Fabrication and characterization of field effect transistors of layered structure consisting of TMTSF and TCNQ

We have fabricated new-type field effect transistors (FETs) of layered structure consisting of TMTSF (donor molecule) layer and TCNQ (acceptor molecule) layer and tried to control the electric conductivity of charge transfer complex layer formed at the interface by applying electric field through the gate electrode. The source-drain current of the TMTSF/TCNQ/SiO2 FET varies corresponding to the gate voltages and the transconductance is larger than that of the TCNQ single-layer FET. Moreover, the dependence of the source-drain current on the gate voltage is reversed by changing the depositing order of donor and acceptor molecules.