Title of article
Stability of n-type doped conducting polymers and consequences for polymeric microelectronic devices
Author/Authors
de Leeuw، نويسنده , , D.M. and Simenon، نويسنده , , M.M.J. and Brown، نويسنده , , A.R. and Einerhand، نويسنده , , R.E.F.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1997
Pages
7
From page
53
To page
59
Abstract
Present polymeric microelectronic devices are typically unipolar devices, based on p-type semiconducting polymers. Bipolar devices stable under ambient conditions are desirable, but have not yet been reported due to a lack of stable n-type doped conducting polymers. Starting from the standard redox potentials of, especially, water and oxygen, stability requirements on electrode potentials of n-type doped conducting polymers are derived. The predictions are then compared with experimental data on stability of conducting polymers. A good agreement is obtained. An electrode potential of about 0 to + 0.5 V (SCE) is required for stable n-type doped polymers, similar to the requirement on the electrode potential for stable undoped p-type polymers. Consequences for bipolar devices are analysed. Huge overpotentials for the redox reaction with wet oxygen are required in order to realize thermodynamically stable bipolar devices from known doped p-type and n-type conducting polymers. Finally, possible solutions, accepting thermodynamic instability, are discussed.
Keywords
stability , Doping , microelectronic devices
Journal title
Synthetic Metals
Serial Year
1997
Journal title
Synthetic Metals
Record number
2071448
Link To Document