Field-effect transistor with polyaniline and poly(2-alkylaniline) thin film as semiconductor

Field-effect transistors (FETs) with polyaniline (PANI) andpoly(2-alkylaniline) films as the semiconductor, respectively, are fabricated. These FETs have ideal source current-drain voltage characteristics with the field-effect mobilities depending on the length of alkyl side chain. The modulation ratio of PANI and poly(2-alkylaniline) FETs decreases with an increase in the thickness of polymer films. The modulation ratio and mobility of the HCl-doped PANI FET increase significantly relative to those of the undoped PANI FET.