Electrochemically prepared heterojunction of polyaniline on n-SrTiO3

A p-type polyaniline (PAn) film was electrochemically polymerized directly on an n-type strontium titanate (SrTiO3) ceramic and thus an n-SrTiO3/p-PAn heterojunction was fabricated. It is demonstrated experimentally that the heterojunction shows rectifying characteristics. The voltage-sensitive varistor coefficient and the ideality factor of the diode were calculated to be 3.76 and 3.68, respectively. Surface treatment of SrTiO3 ceramics, interfacial contact of the composite and some other factors affecting the current-voltage (I-V) characteristic of the n-SrTiO3/p-PAn heterojunction were studied.