Title of article
In situ energy-dispersive X-ray reflectivity measurements of structural changes in thin films for organic electroluminescent devices
Author/Authors
Orita، نويسنده , , Kenji and Morimura، نويسنده , , Takashi and Horiuchi، نويسنده , , Toshihisa and Matsushige، نويسنده , , Kazumi، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1997
Pages
4
From page
155
To page
158
Abstract
An energy-dispersive grazing incident X-ray reflectivity (ED-GIXR) measuring system employing white X-rays and a solid-state X-ray detector (SSD) was first utilized to follow the structural changes occurring in organic EL multilayered films during annealing processes. The data on density, layer thickness and interface roughness obtained for N,N′ -diphenyl-N,N′ -bis(3-methylphenyl)-(1,1′ -biphenyl) -4,4′ diamine (TPD) film and tri(8-hydroxyquinoline) aluminum (Alq3)/TPD films on Si wafer substrates suggested that the instability of TPD films induces a lower stability of Alq3 film by mutual interaction at higher temperature ranges above the glass transition temperature of TPD.
Keywords
Organic devices , Energy-dispersive grazing incident X-ray reflectivity , Thin films , electroluminescence
Journal title
Synthetic Metals
Serial Year
1997
Journal title
Synthetic Metals
Record number
2071636
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