Title of article :
Measurement of electron/hole mobility in organic/polymeric thin films using modified time-of-flight apparatus
Author/Authors :
Chen، نويسنده , , Baijun and Liu، نويسنده , , Shiyong، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 1997
Abstract :
We report, using modified time-of-flight (TOF) apparatus, the measurement of the drift mobility of electrons/holes in thin films of vapordeposited tris(8-hydroxyquinolinolato)aluminum (Alq3) and spin-cast poly(N-vinylcarbazole) (PVK) based on silicon. Drift mobilities of both carriers are strongly electric field and temperature dependent. At room temperature and an electric field of 2 × 105 V cm−1, the effective mobilities of electron and hole are 1 × 10−5 and 7.14 × 10−6 cm2 V−1 s−1, respectively, in a 200 nm thick samples corresponding to the two materials.
Keywords :
Time of flight , Thin films , Silicon , Mobility
Journal title :
Synthetic Metals
Journal title :
Synthetic Metals