Title of article
Field-effect transistors comprising molecular beam deposited α,ω-di-hexyl-hexathienylene and polymeric insulator
Author/Authors
Dimitrakopoulos، نويسنده , , Christos D. and Furman، نويسنده , , Bruce K. and Graham، نويسنده , , Teresita and Hegde، نويسنده , , Suryanarayan and Purushothaman، نويسنده , , Sampath، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1998
Pages
6
From page
47
To page
52
Abstract
Insulated-gate field-effect transistors (IGFETs) comprising molecular beam deposited α,ω-di-hexyl-hexathienylene (DH6T) as the semiconductor layer and different polymeric gate insulators were fabricated and tested. Field-effect mobility values up to 0.13 cm2 V−1 s−1 were obtained, which are the highest values obtained from thin-film transistors of DH6T.
Keywords
Molecular beam deposition , Field-effect transistors , ? , ?-Di-hexyl-hexathienylene
Journal title
Synthetic Metals
Serial Year
1998
Journal title
Synthetic Metals
Record number
2071703
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