Title of article :
Buried interfaces: poly(p-phenylene-vinylene)-on-ITO
Author/Authors :
Kugler، نويسنده , , Th and Andersson، نويسنده , , A and Lِgdlund and Holmes، نويسنده , , A.B and Li، نويسنده , , X and Salaneck، نويسنده , , W.R، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 1999
Abstract :
A model study has been carried out which illustrates the feasibility of X-ray photoelectron spectroscopy (XPS) for studying chemical reactions at the `buriedʹ interface between a thin film of precursor-poly(p-phenylenevinylene) (precursor-PPV) and an indium–tin–oxide (ITO) substrate. The uppermost layer of ITO is composed of an insulting, oxygen-rich phase. By partially replacing indium ions by gallium ions, the immediate formation of GaCl3 at the ITO/precursor-PPV interface can be seen explicitly. Given the chemical similarity between gallium and indium, this is an indirect proof for the formation of lnCl3 upon interaction of precursor-PPV with ITO.
Keywords :
Buried interfaces , Indium–tin–oxide , Poly(p-phenylene-vinylene)-on-ITO
Journal title :
Synthetic Metals
Journal title :
Synthetic Metals
