Title of article :
Charge Carrier Mobility in Langmuir-Blodgett Films of Poly(3-hexylthiophene)
Author/Authors :
Ju?ka، نويسنده , , G. and Arlauskas، نويسنده , , K. and ?sterbacka، نويسنده , , R. and Sandberg، نويسنده , , H. and Stubb، نويسنده , , H.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 1999
Abstract :
The tendency to saturation in the collected charge as a function of light intensity in Langmuir-Blodgett films of poly(3-hexylthiophene) (PHT) has been studied. The tendency to saturation can have two reasons; that the space charge limited current regime has been reached, or influence of very fast bimolecular recombination. We have studied these two cases, and we conclude that bimolecular recombination is a probable cause for the tendency to saturation. The hole mobility in PHT can therefore possibly be estimated as high as 1 cm2/Vs in the initial stage after photoexcitation.
Keywords :
Charge-carrier mobility , Langmuir-Blodgett films , space-charge-limited current , poly(3-hexylthiophene) , time-of-flight photoconductivity , Bimolecular recombination
Journal title :
Synthetic Metals
Journal title :
Synthetic Metals