Photocurrents in P3MeT Schottky barrier diodes

The photocurrent action spectrum of a Schottky diode formed from electrodeposited poly(3-methylthiophene) is shown to follow closely the UV-visible absorption spectrum. At low forward bias, the peak photocurrent asymptotes to the expected square-root dependence on total potential, Vt, across the depletion region. At high reverse bias the superlinear dependence of the photocurrent on Vt suggests that internal photoemission from the rectifying aluminium electrode may be the dominant process.