Title of article
Hreels studies on the electronic structure of oligothiophene films
Author/Authors
do Rego، نويسنده , , A.M. Botelho and Pellegrino، نويسنده , , O. and Silva، نويسنده , , da and Horowitz، نويسنده , , G. and Kouki، نويسنده , , F. and Gamier، نويسنده , , F. and Vilar، نويسنده , , M. Rei، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1999
Pages
2
From page
606
To page
607
Abstract
High resolution electron energy loss spectra (HREELS) were recorded for quaterthiophene (4T) films and compared to those of quinquethiophene (5T) and sexithiophene (6T). Excitonic gap was evaluated to be 2.64±0.02 eV. A second threshold appearing in HREELS but not in optical spectra, is assigned to excitation of charge transfer levels with thresholds of 3.6Q±0.02, 3.24±0.02 and 2.97±0.02 eV for 4T, 5T and 6T respectively. Losses between 1.0 and 2.3 eV in 4T and 5T are assigned to S0→Tn transitions. Resonance mechanisms are responsible for induced excitations in the oligothiophene film surfaces.
Keywords
Polythiophene and derivatives , Polycrystalline surfaces , Semiconducting surfaces , Electron Energy Loss Spectroscopy
Journal title
Synthetic Metals
Serial Year
1999
Journal title
Synthetic Metals
Record number
2072297
Link To Document