Charge trapping instabilities of sexithiophene Thin Film Transistors

The charge trapping instabilities of sexithiophene Thin Film Transistors occuring during device operation, are studied as a function of time and temperature. These charge trapping instabilities are characterised by a threshold voltage shift (ΔVT) brought about by a stress voltage at the gate contact. The charge carrier mobility remains constant under bias stress and is independent on ΔVT. The threshold shift is observed to be logarithmically dependent on time. The decay rate of ΔVT is thermally activated with an activation energy, which is similar to the activated behaviour of the charge carrier mobility, of about 89 meV. The nature of the charge trapping instabilities is not known at this moment.