Title of article
Thin film transistors based on a β,β-disubstituted sexithiophene
Author/Authors
Maud، نويسنده , , J.M. and Herzberg، نويسنده , , D. and Hu، نويسنده , , L. and Salih، نويسنده , , A.J. and Marshall، نويسنده , , J.M.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1999
Pages
1
From page
985
To page
985
Abstract
Previous attempts to develop thin film transistors using β,β-disubstituted sexithiophenes have resulted in devices with very low field effect carrier mobilities. In this paper we show that the mobility can be increased significantly if the oligomer is deposited onto a heated substrate.
Keywords
Oligothiophene
Journal title
Synthetic Metals
Serial Year
1999
Journal title
Synthetic Metals
Record number
2072476
Link To Document