Title of article :
Preparation of bis(dithienothiophene) derivatives for organic thin film transistors
Author/Authors :
Morrison، نويسنده , , J.J and Murray، نويسنده , , M.M. and Li، نويسنده , , X.C. and Holmes، نويسنده , , A.B. and Morratti، نويسنده , , S.C. and Friend، نويسنده , , R.H. and Sirringhaus، نويسنده , , H.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 1999
Pages :
2
From page :
987
To page :
988
Abstract :
The synthesis of two α,α′-disubstituted bis(dithienothiophene) (BDT) derivatives is described. These have been deposited by vacuum sublimation as the active layers in organic thin film transistors (TFTs). The devices exhibit high ON/OFF ratios and preliminary studies show mobilities of 1 X 10−3 and 2 x 10−2 cm2 V−1 s−1 respectively for dithiohexyl (DTH-BDT) and dioctyl (DO-BDT) substituted bis(dithienothiophene). DTH-BDT is found to be considerably more soluble than the unsubstituted BDT.
Keywords :
organic semiconductors based on conjugated molecules , heterocycle synthesis
Journal title :
Synthetic Metals
Serial Year :
1999
Journal title :
Synthetic Metals
Record number :
2072478
Link To Document :
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