Photovoltaic effect on μc-Si:H(n+)/Poly(o-methoxyaniline)/a-Si:H(p) structures

Heterostructures, having poly(o-methoxyaniline) (POMA) deposited by spin coating process as active layer, were built with n-type microcrystalline silicon and p-type amorphous silicon deposited by CVD process near room temperature. JxF device characteristic curves showed rectification properties whose current enhances under visible light illumination. This photomechanism may act directly in the bulk polymer, generating photocarriers, or in the p-Si/POMA interface injecting positive carriers from Si into the POMA bulk. Photovoltage phenomenon was also observed, indicating the possibility of fabricating photovoltaic solar cells with POMA films.