• Title of article

    Electronic structure of θ-type BETS salts

  • Author/Authors

    Mori، نويسنده , , H. and Sakurai، نويسنده , , N. and Tanaka، نويسنده , , S. and Moriyama، نويسنده , , H. and Mori، نويسنده , , T. and Kobayashi، نويسنده , , H. and Kobayashi، نويسنده , , A.، نويسنده ,

  • Issue Information
    دوماهنامه با شماره پیاپی سال 1999
  • Pages
    1
  • From page
    1882
  • To page
    1882
  • Abstract
    A new series of θ-type BETS salts have been prepared and the crystal structure analyses and the electrical resistivity measurements have been carried out. θ-BETS2MM′(SCN)4 [MM′=RbCo, RbZn, CsCo, CsZn]are isostructural to ET analogues. The metal insulator transition occurs at 25 Kfor θ-RbM′, whereas the metallic behaviors down to 2K have been observed for θ-CsM′ and θBETS 2Ag(CN)2. The phase diagram of θ-type BETS salts shows that the electronic state is scaled by electronic correlation parameter (U/W), and that the metallic state extends wider, compared with θ-ET salts.
  • Keywords
    Electrocrystallization , Transport measurementיs , Metal-insulator phase transitions , Organic conductors based upon cation and/or anion radical salts
  • Journal title
    Synthetic Metals
  • Serial Year
    1999
  • Journal title
    Synthetic Metals
  • Record number

    2072911