Title of article :
Finding of a new organic semiconductor with an extremely narrow gap
Author/Authors :
Tajima، نويسنده , , Naoya and Tamura، نويسنده , , Masafumi and Nishio، نويسنده , , Yutaka and Kajita، نويسنده , , Koji and Iye، نويسنده , , Yasuhiro، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 1999
Pages :
2
From page :
1958
To page :
1959
Abstract :
We found that α-(BEDT-TTF)2I3 placed under the pressure above 15kbar is a semiconductor with an extremely narrow gap (gap energy might be as low as several kelvins). The Hall coefficient which varies 6 orders of magnitude between 300K and 1K, and a temperature independent conductivity are key properties to understand this material. No such organic conductors nor inorganic conductors are ever known. Anomalous magnetotransport phenomena were observed at low temperatures.
Keywords :
Semiconductor , Organic conductors based on radical cation salts
Journal title :
Synthetic Metals
Serial Year :
1999
Journal title :
Synthetic Metals
Record number :
2072951
Link To Document :
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