Title of article
Finding of a new organic semiconductor with an extremely narrow gap
Author/Authors
Tajima، نويسنده , , Naoya and Tamura، نويسنده , , Masafumi and Nishio، نويسنده , , Yutaka and Kajita، نويسنده , , Koji and Iye، نويسنده , , Yasuhiro، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1999
Pages
2
From page
1958
To page
1959
Abstract
We found that α-(BEDT-TTF)2I3 placed under the pressure above 15kbar is a semiconductor with an extremely narrow gap (gap energy might be as low as several kelvins). The Hall coefficient which varies 6 orders of magnitude between 300K and 1K, and a temperature independent conductivity are key properties to understand this material. No such organic conductors nor inorganic conductors are ever known. Anomalous magnetotransport phenomena were observed at low temperatures.
Keywords
Semiconductor , Organic conductors based on radical cation salts
Journal title
Synthetic Metals
Serial Year
1999
Journal title
Synthetic Metals
Record number
2072951
Link To Document