Title of article
Metal-insulator transition of the 1-D half-filled band metal (TTM-TTP)I3
Author/Authors
Maesato، نويسنده , , M. and Sasou، نويسنده , , Y. and Kagoshima، نويسنده , , S. and Mori، نويسنده , , T. and Kawamoto، نويسنده , , T. and Misaki، نويسنده , , Y. and Yamabe، نويسنده , , T.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1999
Pages
2
From page
2109
To page
2110
Abstract
(TTM-TTP)I3, in sprite of its 1-D half-filled band, exhibits the metallic conduction at room temperature. Resistance, susceptibility, X-ray diffuse scattering studies revealed a phase transition at Tc ≈ 110 K below which the resistivity increases rapidly, the susceptibility decreases and the 2 kF = 0.5 c* superstructure sets in. The nature of the transition is discussed in the light of the band structure and the precursor effect at higher temperatures.
Keywords
X-ray emission , Transport measurements , Diffraction and scattering , Hall effect , Magnetotransport , Metal-insulator phase transitions , Conductivity , Magnetic phase transitions , Organic conductors based on radical cation and/or anion salts
Journal title
Synthetic Metals
Serial Year
1999
Journal title
Synthetic Metals
Record number
2073028
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