Title of article
Bulk Quantum Hall Effect in η-Mo4O11
Author/Authors
Hill، نويسنده , , S. and Brooks، نويسنده , , J.S. and Uji، نويسنده , , S. and Takashita، نويسنده , , M. and Terakura، نويسنده , , C. and Terashima، نويسنده , , T. and Aoki، نويسنده , , H. and Fisk، نويسنده , , Z. and Sarrao، نويسنده , , J.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 1999
Pages
4
From page
2667
To page
2670
Abstract
We have observed a quantum Hall effect in the bulk quasi-two-dimensional conductor η-Mo4-O11. The Hall resistance exhibits well defined plateaux, coincident with pronounced minima in the diagonal resistance. We present data for several different samples and contact geometries, and discuss a possible mechanism for the quantum Hall effect in this system. We also discuss the implications of these findings in the light of recent predictions concerning chiral metallic surface states in bulk quantum Hall systems.
Keywords
Magnetotransport , superlattices , Hall effect
Journal title
Synthetic Metals
Serial Year
1999
Journal title
Synthetic Metals
Record number
2073268
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