Author/Authors :
Hill، نويسنده , , S. and Brooks، نويسنده , , J.S. and Uji، نويسنده , , S. and Takashita، نويسنده , , M. and Terakura، نويسنده , , C. and Terashima، نويسنده , , T. and Aoki، نويسنده , , H. and Fisk، نويسنده , , Z. and Sarrao، نويسنده , , J.، نويسنده ,
Abstract :
We have observed a quantum Hall effect in the bulk quasi-two-dimensional conductor η-Mo4-O11. The Hall resistance exhibits well defined plateaux, coincident with pronounced minima in the diagonal resistance. We present data for several different samples and contact geometries, and discuss a possible mechanism for the quantum Hall effect in this system. We also discuss the implications of these findings in the light of recent predictions concerning chiral metallic surface states in bulk quantum Hall systems.
